The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

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The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices
Springer | Condensed Matter Physics | April 25, 2016 | ISBN-10: 366249681X | 59 pages | pdf | 3.8 mb


Authors: Li, Zhiqiang
Nominated as an Excellent Doctoral Dissertation by Peking University in 2014
Proposes innovative methods for addressing the challenges in the source/drain engineering of germanium nMOSFETs
Experimentally demonstrates the methods’ effectiveness with regard to reducing parasitic resistance in the source/drain of germanium nMOSFETs

This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600℃ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.

Number of Illustrations and Tables
3 b/w illustrations, 49 illustrations in colour
Topics
Semiconductors
Electronic Circuits and Devices
Nanoscale Science and Technology
Solid State Physics


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